This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base
The 2SC1383, C1383, 1383 is a 30V 1.5A Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683.
The 2SC2330 - C2330 NPN Epitaxial Silicon Transistor for Color TV Chroma Output. Collector-Emitter Volt (Vceo): 400V, Collector-Base Volt (Vcbo): 400V, Collector Current (Ic): 100mA, hfe: 40-80 @ 20mA.
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