2SC2331 60V 700mA NPN Power Transistors

10৳ 
The 2SC2331 80V 700mA 1W NPN Transistor TO-92. This is a General Purpose and Low VCE(sat) Transistors.

2SC2371 300V 0.1A NPN Silicon Power Transistors.

25৳ 
The 2SC2371 is a Silicon NPN power transistors, TO-126 package, High voltage 300V 100mA high frequency. For TV chroma output and vertical output applications.

2SC2481 150V 1.5A NPN Power Transistors

20৳ 
The 2SC2481 is a silicon NPN transistor, Uce = 150V, Ic = 1.5A, applications: TV vertical deflection, audio frequency stage, power switch.

2SC2482 300V 100mA NPN Power Transistor

15৳ 
The 2SC2482 Is a Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 900 mW Through Hole TO-92L Package.

2SC2500 30V 2A NPN (BJT) Transistors

25৳ 
The 2SC2500 is a Silicon NPN Epitaxial Type (PCT Process), Transistor TO-92L package 10V 2000mA 1W.

2SC2553 500V 5A NPN Power Transistors

60৳ 
The 2SC2553 is a Material of Transistor-Si Polarity: NPN Maximum Collector Power Dissipation 40W Maximum Collector-Base Voltage 500V Maximum Collector-Emitter Voltage 400V Maximum Emitter-Base Voltage 7V Maximum Collector Current 5A Max.

2SC2611 300V 100mA NPN (BJT) Transistor

20৳ 
The 2SC2611 300V 100mA 1.2W NPN (BJT) Transistor TO-126 Package, Manufactured by Renesas Semiconductors.

2SC3039 400V 7A NPN Switching Transistor

35৳ 
The 2SC3039, 2SC-3039, 3039 is a 400V 7A NPN Triple Diffused Planar Silicon Transistor, TO-220 Package. This Product manufactured by Sanyo-Japan.

2SC3169 500V 2A NPN Power Transistor

45৳ 
The 2SC3169, 2SC-3169, 3169 is a 500V 2A 25W NPN Silicon Plastic Bipolar Power Transistor, TO-220 Package High Voltage Switching Power Supply Triode.

2SC3198 60V 150mA General Purpose Transistor

5৳ 
The 2SC3198 is a 60V 150mA 400mW NPN General Purpose Transistor TO-92 Package. This NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.

2SC3209 300V 0.2A NPN BJT Transistors

25৳ 
The 2SC3209 is a NPN Maximum Collector 2W Maximum Collector Base Voltage 300 V Maximum Collector Current 0.2 A Max. Operating Junction Temperature 125 °C Transition Frequency 80 MHz Forward Current Transfer Ratio 60.