IRF3805PBF 55V 75A N-Channel Power MOSFET

This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features:

1.  Advanced Process Technology
2.  Ultra Low On-Resistance
3.  175°C Operating Temperature
4.  Fast Switching
5.  Repetitive Avalanche Allowed up to Tjmax
6.  Lead-Free

Packing List:

• 1Pc * IRF3805PBF 55V 75A N-Channel Power MOSFET