2SK2996 600V 10A N-Channel Power MOSFET

The Toshibas 2SK2996(Q) Is a Transistor MOSFET N-Channel Silicon 600V 10A 3-Pins (3+tab) TO-220F In The Fet Transistors, MOSFETs Category. Check Part Details, Parametric And Specifications.

1. Manufacturer: Toshiba  Technology: Si
2. Mounting Style: Through Hole
3. Package / Case: TO-220-3
4. Number of Channels: 1 Channel
5. Transistor Polarity: N-Channel
6. Vds – Drain-Source
7. Breakdown Voltage: 600V
8. Continuous Drain Current: 10A
9. Rds On – Drain-Source
10. Resistance: 1 Ohms
11. Vgs – Gate-Source
12. Voltage: 30 V  Minimum
13. Operating Temperature: – 55 C
14. Maximum Operating Temperature: + 150 C  Packaging:
15. Reel  Channel Mode: Enhancement
16. Brand: Toshiba
17. Configuration: Single
18. Fall Time: 27 ns
19. Height: 15.1 mm
20. Length: 10.16 mm
21. Pd – Power Dissipation: 45 W
22. Rise Time: 15 ns
23. Series: 2SK2996
24. Transistor Type: 1 N-Channel

Packing List:

1Pc * 2SK2996 600V 10A N-Channel Power MOSFET