The BS250 is a P Channel enhancement mode vertical D-MOS transistor manufactured in TO-92 package. The pin configuration of the transistor is as follows: The first pin is Source, second pin is Gate and the third pin is Drain.
The EGS002 is a board unit designed for single-phase pure sine wave inverters. Using a single-phase pure sine wave inverter dedicated chip EG8010 as the control chip, the IR2110S driver With LCD Display.
These epitaxial planar transistors are mounted in the TO-126 plastic package. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140.
The HA17741/PS is an internal phase compensation high-performance operational amplifier, that is appropriate for use in a wide range of applications in the test and control fields chips DIP-8 Pins Package.
The 2SC2553 is a Material of Transistor-Si Polarity: NPN Maximum Collector Power Dissipation 40W Maximum Collector-Base Voltage 500V Maximum Collector-Emitter Voltage 400V Maximum Emitter-Base Voltage 7V Maximum Collector Current 5A Max.
The TIP125, TIP126, TIP127 is a 100V 5A 65W (PNP) Plastic Medium-Power Complementary Silicon Transistors. The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
The TIP140, TIP141 and TIP142 are 100V 10A 125W Silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-220A/B Package.