The CA3130A and CA3130E are op amps that combine the advantage of both CMOS and bipolar transistors. Those are used in the input circuit to provide very-high-input impedance, very-low-input current, and exceptional speed performance.
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
The FQP8N60, FQPF-8N60, 8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.