2SK2837 500V 20A N-Channel Power MOSFET

110৳ 
The 2SK2837, 2SK-2837, K2837, 2837 is a 500V 20A N Channel Silicon Field Effect Transistor Or MOFET TO-3PN-3 Package. Chopper Regulator, DC−DC Converter and Motor Drive.

IRFP450 500V 14A N-Channel Power MOSFET

155৳ 
The IRFP450 500V 14A Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package.

IRF3805PBF 55V 75A N-Channel Power MOSFET

130৳ 
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

BD244C 6A 100V PNP (BJT) Power Transistor

50৳ 
The BD244C, BD-244, 244 is a 6A, 100V 65W PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.

2SC3228 160V 1A NPN (BJT) Transistors

25৳ 
The 2SC3228-Y transistor can have a current gain of 160 to 320. The gain of the 2SC3228 will be in the range from 60 to 320, for the 2SC3228-R it will be in the range from 60 to 120.

LY6W Digital Battery Capacity Tester Module

650৳ 
The LY6W is an exterior 12V24V 36V48V60V liquid crystal lithium battery power voltmeter lead acid storage battery power display detector

2SC3209 300V 0.2A NPN BJT Transistors

25৳ 
The 2SC3209 is a NPN Maximum Collector 2W Maximum Collector Base Voltage 300 V Maximum Collector Current 0.2 A Max. Operating Junction Temperature 125 °C Transition Frequency 80 MHz Forward Current Transfer Ratio 60.

DC5V-35V 5A PWM Motor Speed Controller

210৳ 
The Pulse Width Modulation PWM DC Motor Speed Controller Control Regulator Module 5A Switch Function 90W 4.5-35V LED Dimmer Board DC 5V 12V 24V.

HM628128B CMOS Static RAM DIP-28P IC (Renesas)

330৳ 
The HM628128A is a CMOS static RAM organized 128 kword * 8 bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology.