The HA17555 is a designed for accurate time delays or oscillations. It provides both of trigger terminal and reset terminal in order to enable a wide scope of application including Mono Multi Vibrator and Astable Multi Vibrator.
The SI-9945DY, SI9945, 9945 is a N-Channel Dual MOSFET 60V 4.3A 2W 58mohm 10V Enhancement Mode MOSFETs are produced using advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
The IRFI740G is an N-Channel MOSFET from International Rectifier. It has maximum VDSS rated at 10V and can handle continuous drain current up to 5.4A at 150C. The IRFI740G is a 400V 5.4A 40W TO220F Plastic Package 3Pins Power MOSFET.
The HX711 Load Cell Amplifier Module is 24 Channel high-precision A/D converter, The Chip designed for high-precision electronic scale and design, with two analog channel input, the internal integration of a gain programmable amplifier 128.
The HA17324A is a quad operational amplifier that provide high gain and internal phase compensation, with single power supply. 14 Pin DIP Package. It can be widely used to control equipment.
The MJE350 is a silicon planar PNP transistor intended for use in medium power linear and switching applications. It is mounted in TO-126. The complementary NPN type is MJE340.
The 2SK2098, 2SK-2098, K2098, 2098 is a 150V 0,08Ω 20A 50W -TO-220NIS Package, High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof.
The IXFN70N60, 70N60 is a N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits,
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.