HA17555 Precision Timer IC DIP-8P (Old)

55৳ 
The HA17555 is a designed for accurate time delays or oscillations. It provides both of trigger terminal and reset terminal in order to enable a wide scope of application including Mono Multi Vibrator and Astable Multi Vibrator.

SI9945B 60V 5.3A N-Channel Dual MOSFET

160৳ 
The SI-9945DY, SI9945, 9945 is a N-Channel Dual MOSFET 60V 4.3A 2W 58mohm 10V Enhancement Mode MOSFETs are produced using advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

IRFI740G 400V 5.4A N-Channel Power MOSFET

90৳ 
The IRFI740G is an N-Channel MOSFET from International Rectifier. It has maximum VDSS rated at 10V and can handle continuous drain current up to 5.4A at 150C. The IRFI740G is a 400V 5.4A 40W TO220F Plastic Package 3Pins Power MOSFET.

HX711 Load Cell Amplifier Module

200৳ 
The HX711 Load Cell Amplifier Module is 24 Channel high-precision A/D converter, The Chip designed for high-precision electronic scale and design, with two analog channel input, the internal integration of a gain programmable amplifier 128.

HA17324A Operational Amplifier IC (Renesas)

74৳ 
The HA17324A is a quad operational amplifier that provide high gain and internal phase compensation, with single power supply. 14 Pin DIP Package. It can be widely used to control equipment.

MJE350 300V 500mA PNP Power Transistor

10৳ 
The MJE350 is a silicon planar PNP transistor intended for use in medium power linear and switching applications. It is mounted in TO-126. The complementary NPN type is MJE340.

2SK2098 150V 20A N-Channel Power MOSFET

45৳ 
The 2SK2098, 2SK-2098, K2098, 2098 is a 150V 0,08Ω 20A 50W -TO-220NIS Package, High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof.

IXFN70N60 60V 70A N-Channel Power MOSFET

127৳ 
The IXFN70N60, 70N60 is a N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits,

IRF3805PBF 55V 75A N-Channel Power MOSFET

130৳ 
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.