The 2SK3562, 2SK-3562, K3562, 3562 is a Silicon N-Channel Field Effect Transistor. This is an N-Channel MOSFET type of field effect transistor (FET) that is TO-220F Package as the conducting channel to control the flow of current.
The IRFB9N60A is a 600V 9.2A Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The CD4073BM, CD4081BM and CD4082BM are AND gates, provide the system designer with direct implementation of the AND function and supplement the existing family of CMOS gates.
The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode application.
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.