The 2N7000, 2N-7000, 7000 MOSFET Transistor has a drain voltage of 60V, gate voltage of 40V and a drain current of 200mA in a TO-92 case. A MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor.
The 2SK2003, 2SK-2003, 2003 is a 600V 4A 40W N-Channel Power MOSFET, TO-220F Package, High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V
The CD4069BM is consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the CD4049 hex inverter.
The µPD4723 is a high-breakdown voltage silicon gate CMOS line driver/receiver based on the EIA/TIA-232-E standard. The internal DC/DC converter can switch between multiple voltages, allowing it to operate with a single +3.3 V or +5 V power supply.
The HW586 is maximum battery capacity range: 9999Ah (1Ah = 1000mAh) greater value by shifting the decimal point to switch, when the display is less than 10Ah X.XXX, as shown above to achieve 10Ah XX.XX, and so on.
The DC-DC module based on LM2596 advocate current to 3.0A, but only to 1.8A.However, being introduced module adds a heatsink, using high-power devices. This module can easily reach 4A, 50W.