The voltage to pulse width modulation (PWM) can transform analog voltage into 0-100% PWM duty cycle output. The converted voltage range can be selected (using jumper) either to be from 0 to 5V or 0 to 10V.
The BS250 is a P Channel enhancement mode vertical D-MOS transistor manufactured in TO-92 package. The pin configuration of the transistor is as follows: The first pin is Source, second pin is Gate and the third pin is Drain.
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The HN58C1001FP is an electrically erasable and programmable ROM organized as 131072-word × 8- bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology.
The CD4069BM is consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the CD4049 hex inverter.
The 2SK2996 (Q), 2SK-2996, K2996, 2996 Is a Transistor MOSFET N-Channel Silicon 600V 10A 3-Pins (3+tab) TO-220F In The Fet Transistors, MOSFETs Category. Check Part Details, Parametric And Specifications
The S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. S8050 0.5A/40V NPN Transistor TO-92.