The 2SK2003, 2SK-2003, 2003 is a 600V 4A 40W N-Channel Power MOSFET, TO-220F Package, High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V
The 2SK2850, 2SK-2850, K2850, 2850 Is a 6A 900V 125W N-Channel MOSFET Or Field Effect Transistor TO-3P Package 3 Pin Leads, Product Manufactured by Company Fuji Electric Corp.
The 2SD880 transistor can have a current gain of 60 to 300. The gain of the 2SD880O will be in the range from 60 to 120, for the 2SD880Y it will be in the range from 100 to 200, for the 2SD880GR it will be in the range from 150 to 300.
The IRFP054 is a 55V 80A 240W Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in TO126. The complementary PNP type is MJE350.