The FQP8N60, FQPF-8N60, 8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
The 2SC4835, 2SC-4835, 4835 is a 10V 80mA 150mW Silicon NPN Epitaxial Planer Type For UHF Band Low-Noise Amplification Transistor. Manufactured By NEC Semiconductor.
The BP2326A is a high precision non-isolated buck driver with active PFC, specially designed for universal input offline constant current LED lighting. The driver with on-chip PFC circuit achieves high power factor and low THD.
The 2SK3549-01MR, 2SK3549, 2SK-3549, K3549, 3549 is a 900V 10A 270W N-Channel Power MOSFET Enhancement Mode Package Type TO-247, Manufactured By Company Fuji Electric Corp.
The FS10KM-06 is 60V 10A TO-220F Package High-speed Switching Power MOSFET. Drive Voltage 4V VDSS 100V rDS(ON) (max) 10A Integrated Fast Recovery Diode.
The FQP20N60, FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
The 2SK1507, 2SK-1507, K1507, 1507 is a 600V 9A 50W High speed switching MOSFET, Low on-resistance No secondary breakdown Low driving power High voltage VGSS = ±30V Guarantee Avalanche-proof Applications.