The HX711 Load Cell Amplifier Module is 24 Channel high-precision A/D converter, The Chip designed for high-precision electronic scale and design, with two analog channel input, the internal integration of a gain programmable amplifier 128.
The 2SK3549-01MR, 2SK3549, 2SK-3549, K3549, 3549 is a 900V 10A 270W N-Channel Power MOSFET Enhancement Mode Package Type TO-247, Manufactured By Company Fuji Electric Corp.
The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
The BC557 has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 100mA, hence we cannot connect loads that consume more than 100mA usin
The CD4011B, CD4012B, and CD4023B are NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered IC SOP-14 Pins Package.
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
The TIP32C is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP32C that make this device suitable for audio, power linear and switching applications. The PNP type is TIP31C.