The HW586 is maximum battery capacity range: 9999Ah (1Ah = 1000mAh) greater value by shifting the decimal point to switch, when the display is less than 10Ah X.XXX, as shown above to achieve 10Ah XX.XX, and so on.
The IRF3710 MOSFET is a Field Effect Transistor has a drain voltage of 100V, gate voltage of 20V and drain current of 57A. A MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor TO-220 Package.
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.
The DC5V 2 Channels Relay Module is similar to the 4-channel version but with two relay channels. It is suitable for projects requiring the control of two separate high-power devices, providing a reliable interface between microcontrollers.
The 2SC3852 is a 60V 3A 15MHz 25W NPN Bipolar (BJT) Transistor Through Hole TO-220F Package Silicon NPN Epitaxial Planar Transistor(Driver for Solenoid and Motor, Series Regulator and General Purpose.
The 2SC3679, 2SC-3679, 3679 is a 900V 5A 100W Silicon NPN Triple Diffused Planar High Voltage Switching Transistor TO-218 Package, Manufactured By SANKEN Semiconductor.