The CD4021BM series types are supplied in 16-lead hermetic dual-in-line ceramic packages (D and F suffixes), 16-lead dual-in-line plastic packages (E suffix), and in chip form (H suffix).
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
The 2SK3515, 2SK-3515, K3515, 3515 is a 450V, 10A, 48W TO-220NIS Package MOSFET, The FUJI Electric manufacturer is a IC Chips with N CHANNEL SILICON POWER MOSFET for more details of 2SK3515 can be seen below.
The CD4069BM is consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the CD4049 hex inverter.
The TIP140, TIP141 and TIP142 are 100V 10A 125W Silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-220A/B Package.