The IRF640N is a200V 18A TO-220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The HN58C1001FP is an electrically erasable and programmable ROM organized as 131072-word × 8- bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology.
The EPM1032 is a 5V USB Output Buck Converter DC 6V-24V to 5V 1.5A Step-Down DC-DC Buck Module. The step-down module adopts Japan TDK production of CE- A002 module, the module for a teardown real good (Performance).
The CD4026B- and CD4033B-series types are supplied in 16-lead dual-in-line plastic packages (E suffix), 16-lead small-outline packages (NSR suffix), and 16-lead thin shrink small-outline packages (PW and PWR suffixes).
EG8010 Can achieve 50/60Hz pure sine wave with high accuracy, low harmonic and distortion by external 12MHz crystal oscillator. EG8010 is a CMOS IC that integrates SPWM sinusoid generator dead time control circuit.
The CD4071BM, CD4072BM and CD4075BM OR Gates provide the system designer with direct implementation of the positive-logic OR function and supplement the existing family of CMOS gates.