The IRF640N is a200V 18A TO-220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The CK100 is a general purpose medium power PNP Transistor. The transistor can be used for applications related to amplification, switching and regulation. The device is available in a TO-39 package. Detailed datasheet for the device can be downloaded fro
The TIP125, TIP126, TIP127 is a 100V 5A 65W (PNP) Plastic Medium-Power Complementary Silicon Transistors. The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
The 2SK3451, 2SK-3451, K3451, 3451 is a Transistor MOSFET N-Channel Silicon 600V 13A 80W 3-Pins (3+tab) TO-220F In The FET Transistors, MOSFETs Category. Check Part Details, Parametric And Specifications.
The 2SK3515, 2SK-3515, K3515, 3515 is a 450V, 10A, 48W TO-220NIS Package MOSFET, The FUJI Electric manufacturer is a IC Chips with N CHANNEL SILICON POWER MOSFET for more details of 2SK3515 can be seen below.
The DS1669 Dallas™ is a single digital rheostat or potentiometer with access to all three potentiometer terminals. The potentiometer has 64 wiper positions with equal or linear resistive step sizes.
The 2SC1383, C1383, 1383 is a 30V 1.5A Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683.