The 2SK2462, 2SK-2462, K2462, 2462 is a 100V 15A 30W N-Channel Field Effect Transistor TO-220NIS Package MOSFET, Its designed for high speed switching applications. Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10A).
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2SK2837, 2SK-2837, K2837, 2837 is a 500V 20A N Channel Silicon Field Effect Transistor Or MOFET TO-3PN-3 Package. Chopper Regulator, DC−DC Converter and Motor Drive.
The 2SK2996 (Q), 2SK-2996, K2996, 2996 Is a Transistor MOSFET N-Channel Silicon 600V 10A 3-Pins (3+tab) TO-220F In The Fet Transistors, MOSFETs Category. Check Part Details, Parametric And Specifications
The 2SK2461, 2SK-2461, K2461, 2461 is a 100V 20A 35W N-Channel Field Effect Transistor TO-220NIS Package MOSFET, Its designed for high speed switching applications. Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A).
The FDS3890 80V 4.7A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The IRF9Z34 is a 60V 18A Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The HA17324A is a quad operational amplifier that provide high gain and internal phase compensation, with single power supply. 14 Pin DIP Package. It can be widely used to control equipment.