The 2SK3550, 2SK-3550, K3550, 3550 is a 900V 10A 300W TO-3PF Package of new generation of high voltage MOSFET. This is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
The 2SA-1266, 2SA1266-Y is 50V 150mA 400mW PNP Bipolar Transistor, manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor.
The DS3231SN is a low-cost, extremely accurate I²C real-time clock (RTC) with an integrated temperature-compensated crystal oscillator (TCXO) and crystal. The device incorporates a battery input, and maintains accurate timekeeping.
The 2SK3549-01MR, 2SK3549, 2SK-3549, K3549, 3549 is a 900V 10A 270W N-Channel Power MOSFET Enhancement Mode Package Type TO-247, Manufactured By Company Fuji Electric Corp.
The 2SC2553 is a Material of Transistor-Si Polarity: NPN Maximum Collector Power Dissipation 40W Maximum Collector-Base Voltage 500V Maximum Collector-Emitter Voltage 400V Maximum Emitter-Base Voltage 7V Maximum Collector Current 5A Max.
The IRFP064N is a 60V 70A Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The 2SC458 is a 30V 100mA NPN (BJT) manufactured in a plastic TO92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are from left to right the emitter, collector, and base leads.