The 2SA-1266, 2SA1266-Y is 50V 150mA 400mW PNP Bipolar Transistor, manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor.
The IRF5210 is a 100V 40A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d
The 2SA1013, 2SA-1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.
The 2SK3562, 2SK-3562, K3562, 3562 is a Silicon N-Channel Field Effect Transistor. This is an N-Channel MOSFET type of field effect transistor (FET) that is TO-220F Package as the conducting channel to control the flow of current.
The AD633JN, AD633A are functionally complete four quadrant analog multiplier. Its includes high impedance, differential X and Y inputs and a high impedance summing input (Z) low impedance output voltage is nominal 10V full scale provided by a buried Zene
The IXFN70N60, 70N60 is a N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits,