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DMG2302U-7 N-Channel 20V 4.2A MOSFET

120৳

The DMG2302U-7 is 20V 4.2A 800 mW SOT23 Package. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

SX1308 High Current Adjustable Boost Module

Sensor & Modules, Modules

90৳

The SX1308 booster module carrying SX1308 chip, its packaging is small, and high efficiency. The output power can be adjust, maximum can arrive 28V and its interior integrate the lowest RDS internal resistance 100mΩ metal oxide semiconductor field effect

MPSA92 PNP High Voltage Transistor

Components & IC, Transistor

4৳

The MPSA92, A92, 92 is a 300V 500mA PNP Switching Transistors. PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: MPSA42.

FAN73892 3-Phase Half-Bridge Gate-Drive IC

Components & IC, General IC

590৳

3.3/5V.65/0.35A,3-Phase Half-Bridge Gate-Drive with OCP/Shutdown Protection.

MJH6284G 100V 20A NPN Power Transistor

Components & IC, Transistor

120৳

The MJH6284G, MJH6284, 6284 is a – 100V 20A 4MHz 160W NPN - Darlington Bipolar Transistor Through Hole TO-218 from ON Semiconductor. MJH6284(NPN), MJH6287(PNP) Darlington Complementary Silicon Power Transistors.

HLK-PM12 AC-DC Isolated Power Supply Module

Sensor & Modules, Modules

600৳

220V 12V AC-DC Isolated 5W Power Supply Module.

FB9N60A 600V 9.2A N-Channel MOSFET

Components & IC, General IC

138৳

The IRFB9N60A is a 600V 9.2A Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

2SK3116 N-Channel High Voltage MOSFET

Components & IC, Mosfet / SCR / Triac

78৳

The Toshibas 2SK3116B, 2SK-3116, K3116, 3116 is a Transistor MOSFET N-Channel Silicon 600V 7.5A 3-Pins (3+tab) TO-220 In The FET Transistors, MOSFETs Category. Check Part Details, Parametric And Specifications.

IRFB4110 100V 180A N-Channel Power MOSFET

Components & IC, Mosfet / SCR / Triac

150৳

The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.

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